Effects of La dilution on the CePt2Si2 Kondo lattice

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dc.contributor.author Ragel, F. C.
dc.contributor.author P de V du Plessis
dc.contributor.author A M Strydom
dc.date.accessioned 2019-08-07T06:01:49Z
dc.date.available 2019-08-07T06:01:49Z
dc.date.issued 2008
dc.identifier.issn 0953-8984
dc.identifier.uri http://www.digital.lib.esn.ac.lk/handle/123456789/3930
dc.description.abstract Electrical resistivity (ρ(T)) and magnetoresistivity (MR) measurements are presented for the (Ce1−xLax)Pt2Si2 alloy system. ρ(T) data at low temperatures for alloys in the concentrated Kondo lattice regime 0≤x≤0.2 conform to a ρ(T) = ρ0+AT2 dependence and Fermi-liquid parameters A and Tcoh are presented. The maximum that occurs in ρ(T) in the concentrated Kondo lattice regime at a temperature of Tmax is no longer observed for samples with x≥0.3 which show single-ion Kondo behaviour. MR measurements on alloys with x = 0.5, 0.7 and 0.9 yield values of the Kondo temperature TK through Schlottmann analysis. The dependences of A, Tmax and TK on x are discussed in terms of the volume and Kondo hole effects occurring upon alloying. Anomalies in ρ(T) for LaPt2Si2 and some of the alloy samples are also reported. en_US
dc.language.iso en en_US
dc.publisher IOP PUBLISHING LTD en_US
dc.title Effects of La dilution on the CePt2Si2 Kondo lattice en_US
dc.type Article en_US
dc.identifier.sslno 12 en_US


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